| PART |
Description |
Maker |
| RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
| SZM-3066Z SZM3066Z SZM3066ZPCK-EVB1 SZM3066ZSQ |
3.3GHz to 3.8GHz 2W POWER AMPLIFIER
|
RF Micro Devices
|
| LT5538 |
40MHz to 3.8GHz RF Power Detector
|
Linear Technology
|
| MGA-23003 MGA-23003-BLKG |
3.3-3.8 GHz WiMAX Power Amplifi er (3x3mm)
|
AVAGO TECHNOLOGIES LIMITED
|
| MGA-43328-BLKG |
2.5?.7 GHz 29dBm High Linearity Wireless Data Power Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| ACPM-5002-BLK ACPM-5002-TR1 |
Multimode PA - UMTS Band2, LTE Band25 and CDMA PCS 3x3mm Power Amplifi er Module with Coupler
|
AVAGO TECHNOLOGIES LIMITED
|
| LTC6403-1 |
200MHz, Low Noise, Low Power Fully Differential Input/Output Amplifi er/Driver
|
Linear Technology
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| MGFC36V5258 C365258 |
5.2 - 5.8GHz BAND 4W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.2~5.8GHZ BAND 4W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| LT1187_06 LT1187 LT1187CJ8 LT1187CN8 LT1187CS8 LT1 |
Low Power Video Difference Amplifi er
|
LINER[Linear Technology]
|
